硅材料英语

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硅片行业术语大全
Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子

Alignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。

Anisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。

Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the res*不良词语*t of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。

Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。

Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）

Base Silicon Layer - The silicon wafer that is located underneath the ins*不良词语*ator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。

Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。

Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an ins*不良词语*ating layer.
绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。

Bonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。

Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。

Buried Oxide Layer (BOX) - The layer that ins*不良词语*ates between the two wafers.
氧化埋层(BOX) - 在两个晶圆片间的绝缘层。

Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
载流子 - 晶圆片中用来传导电流的空穴或电子。

Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。

Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。

Cleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面

Crack - A mark found on a wafer that is greater than 0.25 mm in length.
裂纹 - 长度大于0.25毫米的晶圆片表面微痕。

Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。

Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。

Contaminant, Partic*不良词语*ate (see light point defect)
污染微粒 （参见光点缺陷）

Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。

Contamination Partic*不良词语*ate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。

Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。

Crystal Indices (see Miller indices)
晶体指数 （参见米勒指数）

Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 - 晶圆片上的电场区域，此区域排除载流子。

Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。

Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。

Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。

Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。

Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。

Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）

Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离。

Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。

Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。

Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。

Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。

Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendic*不良词语*ar to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。

Four-Point Probe - Test equipment used to test resistivity of wafers.
四探针 - 测量半导体晶片表面电阻的设备。

Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。

Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。

Goniometer - An instrument used in measuring angles.
角度计 - 用来测量角度的设备。

Gradient, Resistivity (not preferred; see resistivity variation)
电阻梯度 （不推荐使用，参见“电阻变化”）

Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。

Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。

Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。

Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。

Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。

Laser Light-Scattering Event - A signal p*不良词语*se that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。

Lay - The main direction of surface texture on a wafer.
层 - 晶圆片表面结构的主要方向。

Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。

Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。

Lot - Wafers of similar sizes and characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。

Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。