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[书籍] Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Phot

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发表于 2011-8-26 09:01:27 | 显示全部楼层 |阅读模式
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Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications
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Lifetime Spectroscopy
A Method of Defect Characterization in Silicon for Photovoltaic Applications

Abbreviations, acronyms and symbols XVII
Abbreviations and acronyms................................................................. XVII
Arabic symbols ....................................................................................XVIII
Greek symbols......................................................................................XXIV
Introduction 1
Motivation....................................................................................................1
Aims and outline ..........................................................................................3
References....................................................................................................4
1. Theory of carrier lifetime in silicon 5
1.1 Introduction ..........................................................................................5
1.2 Fundamentals 1: basic and advanced models  
for the fundamental semiconductor quantities......................................6
1.2.1 Intrinsic carrier concentration and doping: the basic model ......6
1.2.2 Temperature dependence  
of the majority carrier concentration: the standard model .......12
1.2.3 Impact of advanced temperature models  
for NC,V(T) and Egap(T): the advanced model............................21
1.2.4 Tabular overview of the T-models ...........................................30
1.3 Fundamentals 2: generation, recombination and carrier lifetime .......31
1.4 Carrier recombination mechanisms....................................................32
1.4.1 Radiative recombination ..........................................................33
1.4.2 Auger recombination................................................................35
1.4.3 Bulk recombination through defects (Shockley-Read-Hall) ....41
1.4.4 Surface recombination through defects....................................49
1.5 Effective lifetime and the separation of bulk lifetime ........................51
1.6 Chapter summary ...............................................................................55
References..................................................................................................56
..................



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