Effect of enhanced pressure during annealing on the creation of

zhangcunbiao

Effect of enhanced pressure during annealing on the creation of
defects in electron-irradiated silicon
A. Misiuka,
, B. Surmaa,b
, J. Bak-Misiukc
, I.V. Antonovad
, S.A. Smagulovae
a
Institute of Electron Technology, Al. Lotniko ´w 32/46, 02-668 Warsaw, Poland
b
Institute of Electronic Materials Technology, Wolczyn ´ska 133, 01-919 Warsaw, Poland
c
Institute of Physics, PAS, Al. Lotniko ´w 32/46, 02-668 Warsaw, Poland
d
Institute of Semiconductor Physics, 630090, Lavrentieva 13, Novosibirsk, Russia
e
Yakutsk State University, Yakutsk, Russia
Abstract
The defect structure of electron-irradiated Czochralski-grown silicon (electron doses 1018
–1021
m
2
, at 2.5MeV) was
found to change during high-temperature annealing under hydrostatic pressures up to 1.2GPa with treated samples
showing a retardation of oxygen precipitation in the lattice. This likely arises from the formation of radiation-induced
defects such as VO and VO2, as well as the effect of the applied pressure on both the concentration and diffusivity of
oxygen and silicon interstitials that occur within the temperature range of 1070–1400K.
r 2004 Elsevier Ltd. All rights reserved.
Keywords: Silicon; Oxygen; Electron irradiation; Annealing; High pressure; Defects