Pressure-induced formation of electrically active centres

zhangcunbiao

Pressure-induced formation of electrically active centres
in irradiated silicon: comparison of electron
and neutron irradiation
I.V. Antonovaa,
, A. Misiukb
, C. Londos
c
, B. Surmab,d
, S.A. Smagulovae
,
A. Bukowski
d,f
, W. Jungb
, A. Barcz
b
a
Institute of Semiconductor Physics SB RAS, 630090, Lavrent’eva 13, Novosibirsk, Russian Federation
b
Institute of Electron Technology, Al. Lotniko ´w 32/46, 02-668 Warsaw, Poland
c
The University of Athens, Physics Department, Panepistimiopolis Zografos, 157 84 Greece
d
Institute of Electronic Materials Technolog,. Wo ´lczyn ´ska 133, 01-919 Warsaw, Poland
e
Yakutsk State University, Yakutsk, Russia
f
Silicon CEMAT, Wo ´lczyn ´ska 133, 01-919 Warsaw, Poland
Received 1 November 2003; received in revised form 20 September 2004