Electronic levels of isolated and oxygen-perturbed hydrogen in

zhangcunbiao

Electronic levels of isolated and oxygen-perturbed hydrogen in
silicon and migration of hydrogen
K. Bonde Nielsena,
*, L. Dobaczewski
b
,S.S
g( arda
, B. Bech Nielsena
a
Institute of Physics and Astronomy, University of ( Aarhus, DK-8000 ( Aarhus, Denmark
b
Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland