Characterization of the oxygen distribution in Czochralski silicon

zhangcunbiao

Characterization of the oxygen distribution in Czochralski silicon
using hydrogen-enhanced thermal donor formation
A.G. Ulyashin a
, I.A. Khorunzhii
a
, R. Job b,
*, W.R. Fahrner b
a
Belarussian State Polytechnical Academy, Skariny A6e. 65, 220027 Minsk, Belarus
b
Department of Electrical Engineering, Uni6ersity of Hagen, Haldener Strasse 182, 58084 Hagen, Germany
Abstract
The hydrogen-enhanced thermal donor (TD) formation in Czochralski (Cz) silicon is used for the characterization of the
interstitial oxygen distribution by spreading resistance probe (SRP) analysis or by the carrier concentration from capacitance–
voltage (C–V) measurements. For as-grown wafers or wafers with a denuded zone, the enhanced TD formation in Cz silicon has
been studied by applying a hydrogenation from a plasma. A kinetic model for the hydrogen-enhanced TD formation is presented,
and a method for the conversion of the carrier concentration due to TDs into a concentration of interstitial oxygen is proposed.
For comparison, infrared spectrometry was applied for the characterization of the oxygen concentration in the samples. On the
basis of the proposed model, the analysis by the SRP or C–V measurements of Cz Si samples containing TDs, which were
generated with the support of hydrogen, can be used for the quantitative estimation of the distribution of interstitial oxygen in
the as-grown wafers as well as, at least qualitatively, of the interstitial oxygen distribution in wafers with denuded zones. © 2000
Elsevier Science S.A. All rights reserved.
Keywords: Silicon; Hydrogen plasma; Thermal donors; Oxygen distribution