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[文献] Engineering the diﬀusion behavior of dopants (B, Sb) in

发表于 2010-12-29 21:40:02 | 显示全部楼层 |阅读模式

Engineering the diﬀusion behavior of dopants (B, Sb) in
silicon by incorporation of carbon
P. Lav e eant *, P. Werner, N. Engler, U. G

Engineering the diffusion behavior of dopants (B, Sb) in silicon by incorporatio.pdf

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