Early stages of oxygen clustering in hydrogenated Cz-Si:

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Early stages of oxygen clustering in hydrogenated Cz-Si:
IR absorption studies
L.I. Murina,
*, V.P. Markevicha,1
, M. Suezawab
, J.L. Lindstr . omc
, M. Klevermanc
,
T. Hallbergd
a
Institute of Solid State and Semiconductor Physics, P. Brovki Street 17, 220072 Minsk, Belarus
b
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
c
Department of Physics, Solid State Physics, University of Lund, S-221 00 Lund, Sweden
d
Defense Research Establishment, Box 1165, S-581 11 Link . oping, Sweden
Abstract
The formation kinetics of small oxygen clusters in hydrogenated Si has been studied by means of infrared absorption
measurements. Hydrogen was introduced into the crystals by in-diffusion from H2 gas at 1200–13008C. The samples
were heated at temperatures in the range of 280–3708C for different durations. At initial stages of heat-treatment,
enormous generation rates of the oxygen dimer have been observed in hydrogenated samples. This indicates highly
enhanced diffusion of the interstitial oxygen atoms. The maximum achievable concentration of the dimers is found to be
limited by their dissociation rate even at temperatures of about 3008C, while in as-grown crystals the capture processes
are known to be dominant in this temperature region. An explanation of this phenomenon is presented. # 2001
Published by Elsevier Science B.V.
PACS: 61.72.C; 66.30.J; 78.40.F