Characterization of defects in annealed Czochralski-grown

zhangcunbiao

Characterization of defects in annealed Czochralski-grown
silicon wafers by photoluminescence method
T. Yamamoto*, K. Nishihara
Electronics Engineering Laboratories, Sumitomo Metal Industries Ltd., 1-8 Fusocho, Amagasaki 660-0891, Japan
Abstract
Defect-related deep-level traps in two-step annealed Czochralski-grown silicon (Cz-Si) wafers are examined by the
photoluminescence (PL) method. As interstitial oxygen reduction increases after the annealing, the deep-level emissions
labeled by the D1 and D2 lines become stronger in the PL spectra at 4.2 K. The band-edge PL intensity at room
temperature decreases with an increase in the D-line emission. The decay-time curve of the band-edge emission is
successfully measured under the same excitation condition as the band-edge PL intensity measurement using an
instrument we developed. Using this decay-time curve method, the band-edge PL intensity is correlated to the carrier
lifetime for the two-step annealed Cz-Si wafers. ( 2000 Elsevier Science B.V. All rights reserved.
PACS: 78.55.A; 61.72.H