Characterisation of oxygen and oxygen-related defects in highly- and

zhangcunbiao

Characterisation of oxygen and oxygen-related defects in highly- and
lowly-doped silicon
E. Simoen a,
*, C. Claeys
a,b
, R. Loo a
, O. De Gryse
c
, P. Clauws
c
, R. Job d
,
A.G. Ulyashin d
, W. Fahrner
d
a
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
b
E.E. Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
c
Vakgroep Vaste-stofwetenschappen, Universiteit Gent, Krijgslaan 281, B-9000 Gent, Belgium
d
Department of Electrical Engineering LGBE, University of Hagen, Haldener Str. 182, PO Box 940, 58084 Hagen, Germany
Abstract
In this paper, an overview will be given about analytical techniques which are suitable for the study of oxygen and oxygen
precipitation in highly- and lowly-doped silicon. It will be shown that in the case of highly-doped silicon, the application of Fourier
Transform Infrared (FT-IR) absorption spectroscopy requires the use of ultra-thinned or high-fluence irradiated samples and a
dedicated data analysis. This sample preparation is necessary to reduce the free carrier absorption in the mid-IR region. It is shown
that besides the interstitial oxygen concentration [Oi] and the amount of precipitated oxygen, it is possible to determine the
stoichiometry of oxygen precipitates from the study of the corresponding absorption bands. Oxygen precipitation in p
silicon can
also be investigated by the D1/D2 lines in photoluminescence (PL) on as-grown or heat/treated material without special sample
preparation. In oxygen-doped high-resistivity float-zone silicon, standard FT-IR analysis can be applied to determine [Oi]. The
presence of oxygen-related shallow donors can be probed by a combination of electrical (spreading resistance probe, SRP;
capacitance/voltage, C /V) and (quasi-)spectroscopic techniques (deep-level transient spectroscopy, DLTS).
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