Anomalous oxygen precipitation near the vacancy and

zhangcunbiao

Anomalous oxygen precipitation near the vacancy and
interstitial boundary in CZ-Si wafers
Don-Ha Hwang!,*, Bo-Young Lee!, Hak-Do Yoo!, Oh-Jong Kwon"
!LG Siltron Inc, Imsoo-dong, Kumi, Kyungbuk 730-350, South Korea
"Department of Metallurgical Engineering, Kyungbuk National University, d1370 Sankyuk-dong, Puk-gu, Taegu 702-701, South Korea
Received 12 December 1999; accepted 7 February 2000
Communicated by M. Schieber
Abstract
The behavior of oxygen precipitation was investigated in radial direction using Si wafers with di!erent generation area
of vacancy-related defects. Oxygen precipitation is more enhanced in vacancy-rich region than in interstitial-rich region.
The behavior of oxygen precipitation in the radial direction is strongly dependent on the size of vacancy-rich region
which is related to crystal growth condition. Anomalous oxygen precipitation occurred in the marginal vacancy-rich
region and the inner edge of interstitial rich region. In the marginal interstitial-rich region, however, oxygen precipitation
is suppressed to nearly zero. ( 2000 Elsevier Science B.V. All rights reserved.
Keywords: Silicon; Oxygen precipitation; Regional division